Silicon Carbide power semiconductors are compound semiconductors developed by the composition of carbon and silicon. Silicon Carbide offers numerous advantages over silicon, which include enabling a wider range of p- and n-type control required for device construction, 3x the band gap, and 10x the breakdown electric field strength. These advance characteristics of silicon carbide arouse increased usage of silicon carbide semiconductors, such as in high-frequency radar systems, satellite communications, microwave links, and mobile phones. These this superiority of silicon carbide semiconductors stimulate increased usage of silicon carbide devices and is anticipated to fuel the growth of the global silicon carbide power semiconductor market during the research study.
The global silicon carbide power semiconductor market has witnessed significant growth during the last two decades and anticipated to show substantial growth during the forecast period of 2018-2026. Silicon carbide has a level of hardness similar to a diamond, due to which silicon carbide semiconductors are able to operate in extreme conditions. The primary factor driving the silicon carbide power semiconductor market includes increasing demand of power electronics across various industry verticals including IT & telecom, aerospace & defense, industrial, energy & power, semiconductor & electronics, automotive, healthcare, and some others. For instance, silicon carbide power semiconductors facilitate in controlling automotive electronics such as electric braking system, power steering, seat control hydro electric vehicles main inverter and others.
These devices are also used in energy conversion in actuators and generators assimilated in aircraft. Moreover, silicon carbide is among few compound semiconductors which are being considered to be used in the production of power semiconductors for the 5G communication. Thus, this is expected to create new opportunities for the manufactures of silicon carbide semiconductors. However, high wafer cost of silicon carbide semiconductors and complexity in the manufacturing process are limiting the growth of the global silicon carbide semiconductor market.
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The global silicon carbide power semiconductor market can be segmented on the basis of power module, industry vertical, and geography. By power module, the global silicon carbide power semiconductor market can be segmented into power products and discrete products. The power module is anticipated to hold a larger share during the research study. On the basis of industry vertical, the global silicon carbide power semiconductor market can be categorized into IT & telecom, aerospace and defense, industrial, energy and power, electronics, healthcare, and others.